The ability to inject dopant atoms with high spatial resolution, flexibilityin dopant species and high single ion detection fidelity opens opportunitiesfor the study of dopant fluctuation effects and the development of devices inwhich function is based on the manipulation of quantum states in single atoms,such as proposed quantum computers. We describe a single atom injector, inwhich the imaging and alignment capabilities of a scanning force microscope(SFM) are integrated with ion beams from a series of ion sources and withsensitive detection of current transients induced by incident ions. Ion beamsare collimated by a small hole in the SFM tip and current changes induced bysingle ion impacts in transistor channels enable reliable detection of singleion hits. We discuss resolution limiting factors in ion placement andprocessing and paths to single atom (and color center) array formation forsystematic testing of quantum computer architectures in silicon and diamond.
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